1st Edition

Defects in Optoelectronic Materials



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ISBN 9789056997144
Published November 6, 2001 by CRC Press
379 Pages

USD $270.00

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Book Description

Defects in Optoelectronic Materials bridges the gap between device process engineers and defect physicists by describing current problems in device processing and current understanding of these defects based on defect physics. The volume covers defects and their behaviors in epitaxial growth, in various processes such as plasma processing, deposition and implantation, and in device degradation. This book also provides graduate students cutting-edge information on devices and materials interaction.

Table of Contents

Saturation of Free Carrier Concentration in Semiconductors
The Amphoteric Defect Model
Maximum Doping Limits in GaAs
Other Group III-V Semiconductors
Group III-Nitrides
Group II-VI Semiconductors
Group I-III-VI2 Ternaries
Other Semiconductors
Unintentional Doping
Amphoteric Dopants
Point Defect Formation Near Surfaces
Point Defect Equilibria near the Semiconductor Surfaces
Point Defect Formation Kinetics in the Sub-Surface Layer - Bottleneck Effect
Bottleneck Related Phenomena
Optical Characterization of Plasma Etching Induced Damage
Ion-assisted Etching: Understanding the Problem
Optical Damage Assessment Techniques: Choosing a Method
The Range of Ion-Induced Damage
Dry Etch Damage in Widegap Semiconductor Materials
Damage in the InGaA1N System
Damage in SiC
Damage in II-VI Compounds
Generation, Removal, and Passivation of Plasma Process Induced Defects
Dry Etching Systems
Plasma Process Indu

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Author(s)

Biography

Wada, Kazumi